J112,126 datasheet

Маркировка

J112,126
Производитель

NXP Semiconductors
Описание

NXP Semiconductors J112,126 Channel Type: N Configuration: Single Current - Drain (idss) @ Vds (vgs=0): 5mA @ 15V Drain Source Voltage Vds: 40 V Drain To Source Voltage (vdss): 40V Drain-gate Voltage (max): -40V Drain-source Volt (max): 40V Fet Type: N-Channel Gate-source Breakdown Voltage: - 40 V Gate-source Voltage (max): -40V ID_COMPONENTS: 1950336 Input Capacitance (ciss) @ Vds: 6pF @ 10V (VGS) Lead Free Status / Rohs Status: Compliant Maximum Drain Gate Voltage: - 40 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Through Hole Mounting Style: Through Hole Mounting Type: Through Hole Operating Temperature (max): 150C Operating Temperature Classification: Military Package / Case: TO-226-3, TO-92-3 (TO-226AA) Pin Count: 3 Power - Max: 400mW Resistance - Rds(on): 50 Ohm Transistor Polarity: N-Channel Voltage - Breakdown (v(br)gss): 40V Voltage - Cutoff (vgs Off) @ Id: 1V @ 1?µA Product Category: JFET RoHS: yes Drain Source Voltage VDS: 40 V Gate-Source Breakdown Voltage: - 40 V Factory Pack Quantity: 2000 Part # Aliases: AMO J112 Other Names: 934005270126, J112 AMO
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6 шт.
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